Invention Grant
- Patent Title: Memory cell operation including capacitance
- Patent Title (中): 存储单元操作,包括电容
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Application No.: US13117889Application Date: 2011-05-27
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Publication No.: US08665630B2Publication Date: 2014-03-04
- Inventor: Roy E. Meade , John K. Zahurak
- Applicant: Roy E. Meade , John K. Zahurak
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
Methods, devices, and systems associated with memory cell operation are described. One or more methods of operating a memory cell include charging a capacitor coupled to the memory cell to a particular voltage level and programming the memory cell from a first state to a second state by controlling discharge of the capacitor through a resistive switching element of the memory cell.
Public/Granted literature
- US20120300530A1 MEMORY CELL OPERATION Public/Granted day:2012-11-29
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