Invention Grant
- Patent Title: Spin torque transfer cell structure utilizing field-induced antiferromagnetic or ferromagnetic coupling
- Patent Title (中): 使用场诱导反铁磁或铁磁耦合的自旋转矩传递单元结构
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Application No.: US13544670Application Date: 2012-07-09
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Publication No.: US08665640B2Publication Date: 2014-03-04
- Inventor: Jun Liu , Gurtej Sandhu
- Applicant: Jun Liu , Gurtej Sandhu
- Applicant Address: US ID Boise
- Assignee: Micron Technologies, Inc.
- Current Assignee: Micron Technologies, Inc.
- Current Assignee Address: US ID Boise
- Agency: Fletcher Yoder, P.C.
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A magnetic memory cell including a soft magnetic layer and a coupling layer, and methods of operating the memory cell are provided. The memory cell includes a stack with a free ferromagnetic layer and a pinned ferromagnetic layer, and a soft magnetic layer and a coupling layer may also be formed as layers in the stack. The coupling layer may cause antiferromagnetic coupling to induce the free ferromagnetic layer to be magnetized in a direction antiparallel to the magnetization of the soft magnetic layer, or the coupling layer may cause ferromagnetic coupling to induce the free ferromagnetic layer to be magnetized in a direction parallel to the magnetization of the soft magnetic layer. The coupling layer, through a coupling effect, reduces the critical switching current of the memory cell.
Public/Granted literature
- US20120275218A1 SPIN TORQUE TRANSFER CELL STRUCTURE UTILIZING FIELD-INDUCED ANTIFERROMAGNETIC OR FERROMAGNETIC COUPLING Public/Granted day:2012-11-01
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