Disclosed is a non-volatile memory device which includes a memory cell array having memory cells arranged in rows and columns, a page buffer circuit configured to read data from the memory cell array, and a control logic and input/output interface block including a normal read scheduler controlling a normal read operation and a data recover read scheduler controlling a data recover read operation and configured to control the page buffer circuit at a read request. One of the normal read scheduler and the data recover read scheduler is selected according to selection information provided from an external device.