Invention Grant
US08665664B2 Semiconductor memory device, memory system including the same, and method for adjusting timing between internal clock and command 有权
半导体存储器件,包括其的存储器系统以及用于调整内部时钟和命令之间的时序的方法

  • Patent Title: Semiconductor memory device, memory system including the same, and method for adjusting timing between internal clock and command
  • Patent Title (中): 半导体存储器件,包括其的存储器系统以及用于调整内部时钟和命令之间的时序的方法
  • Application No.: US12833048
    Application Date: 2010-07-09
  • Publication No.: US08665664B2
    Publication Date: 2014-03-04
  • Inventor: Jinyeong MoonSang-Sic Yoon
  • Applicant: Jinyeong MoonSang-Sic Yoon
  • Applicant Address: KR Gyeonggi-do
  • Assignee: Hynix Semiconductor Inc.
  • Current Assignee: Hynix Semiconductor Inc.
  • Current Assignee Address: KR Gyeonggi-do
  • Agency: IP & T Group LLP
  • Priority: KR10-2010-0017385 20100225
  • Main IPC: G11C8/18
  • IPC: G11C8/18
Semiconductor memory device, memory system including the same, and method for adjusting timing between internal clock and command
Abstract:
A method for adjusting a timing between an internal clock and a command in a gear down mode of a memory device includes detecting a sync pulse at rising and falling edges of the internal clock, and adjusting between the internal clock of the memory device and the command according to the detection result.
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