Invention Grant
US08667348B2 Data writing method for non-volatile memory module and memory controller and memory storage apparatus using the same
有权
用于非易失性存储器模块和存储器控制器的数据写入方法以及使用其的存储器存储装置
- Patent Title: Data writing method for non-volatile memory module and memory controller and memory storage apparatus using the same
- Patent Title (中): 用于非易失性存储器模块和存储器控制器的数据写入方法以及使用其的存储器存储装置
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Application No.: US13091155Application Date: 2011-04-21
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Publication No.: US08667348B2Publication Date: 2014-03-04
- Inventor: Nien-Hao Hsu , Tsai-Fu Yen , Chee-Shyong Aw-Yong
- Applicant: Nien-Hao Hsu , Tsai-Fu Yen , Chee-Shyong Aw-Yong
- Applicant Address: TW Miaoli
- Assignee: Phison Electronics Corp.
- Current Assignee: Phison Electronics Corp.
- Current Assignee Address: TW Miaoli
- Agency: Jianq Chyun IP Office
- Priority: TW100101974A 20110119
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
A data writing method for a re-writable non-volatile memory module and a memory controller and a memory storage apparatus using the same are provided, wherein the re-writable non-volatile memory module has a plurality of physical writing units, and each of the physical writing units has a plurality of physical writing segments. The data writing method includes identifying at least one non-used segment among the physical writing segments of each of the physical writing units and writing a plurality of segment data streams into the physical writing units, wherein the non-used segments of the physical writing units are not used for writing the segment data. Accordingly, the data writing method can effectively use normal physical writing segments in the physical writing units.
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