Invention Grant
- Patent Title: Flash memory system that uses an interleaving scheme for increasing data transfer performance between a memory device and a controller and a method therof
- Patent Title (中): 闪存系统使用交织方案来增加存储设备和控制器之间的数据传输性能以及方法
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Application No.: US12256784Application Date: 2008-10-23
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Publication No.: US08667365B2Publication Date: 2014-03-04
- Inventor: Nam Phil Jo , Dong Hyuk Chae , Sung Chung Park , Dong Gu Kang
- Applicant: Nam Phil Jo , Dong Hyuk Chae , Sung Chung Park , Dong Gu Kang
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2007-0106828 20071023
- Main IPC: G06F11/00
- IPC: G06F11/00

Abstract:
A memory system includes a plurality of memory devices, a controller configured to control the plurality of memory devices, and at least one channel connected between the plurality of memory devices and the controller. The at least one channel includes input/output data lines and control signal lines, which are connected with the plurality of memory devices, and chip enable signal lines respectively connected to each of the plurality of memory devices, wherein the chip enable signal lines enable the plurality of memory devices independently. The controller sends a read command or a program command to one of the plurality of memory devices, and while the one of the plurality of memory devices is performing an internal read operation in response to the read command, the controller reads data from another one of the plurality of memory devices, or while the one of the plurality of memory devices is performing an internal program operation in response to the program command, the controller programs data to another one of the plurality of memory devices.
Public/Granted literature
- US20090150751A1 MEMORY SYSTEM THAT USES AN INTERLEAVING SCHEME AND A METHOD THEREOF Public/Granted day:2009-06-11
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