Invention Grant
- Patent Title: Method of forming a nanostructure
- Patent Title (中): 形成纳米结构的方法
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Application No.: US12125030Application Date: 2008-05-21
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Publication No.: US08668833B2Publication Date: 2014-03-11
- Inventor: Han Guan Chew , Fei Zheng , Wee Kiong Choi , Tze Haw Liew
- Applicant: Han Guan Chew , Fei Zheng , Wee Kiong Choi , Tze Haw Liew
- Applicant Address: SG Singapore SG Singapore
- Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.,National University of Singapore
- Current Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.,National University of Singapore
- Current Assignee Address: SG Singapore SG Singapore
- Agency: Horizon IP Pte. Ltd.
- Main IPC: B32B33/00
- IPC: B32B33/00 ; B44C1/22 ; H01L21/311

Abstract:
A method of forming a discrete nanostructured element at one or more predetermined locations on a substrate is presented. The method includes forming a mask member over the substrate. A window is formed in the mask member at each of one or more locations at which it is required to form the nanostructured element thereby to expose a portion of a surface of the substrate. A portion of the substrate exposed by the window at the one or more locations is removed to form one or more recesses in the substrate. The method further includes forming a layer of a nanostructure medium over a surface of the recess and annealing the structure thereby to form the nanostructured element in each of the one or more recesses. The nanostructured element includes a portion of the nanostructure medium and has an external dimension along at least two substantially orthogonal directions of less than substantially 100 nm.
Public/Granted literature
- US20090291311A1 METHOD OF FORMING A NANOSTRUCTURE Public/Granted day:2009-11-26
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