Invention Grant
- Patent Title: Solution used in the fabrication of a porous semiconductor material, and a method of fabricating said material
- Patent Title (中): 用于制造多孔半导体材料的溶液以及制造所述材料的方法
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Application No.: US12082234Application Date: 2008-04-09
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Publication No.: US08668840B2Publication Date: 2014-03-11
- Inventor: Bruno Delahaye , Jean-Luc Baltzinger , Malamine Sanogo , Gaëlle Richou
- Applicant: Bruno Delahaye , Jean-Luc Baltzinger , Malamine Sanogo , Gaëlle Richou
- Applicant Address: FR Corbeil Essonne
- Assignee: ALTIS Semiconductor
- Current Assignee: ALTIS Semiconductor
- Current Assignee Address: FR Corbeil Essonne
- Agency: Sofer & Haroun, LLP
- Priority: FR0754443 20070413
- Main IPC: C09K13/08
- IPC: C09K13/08
Abstract:
A solution includes hydrofluoric acid, an alcohol, and a metallic salt, in which the metal has a redox potential that is positive relative to a hydrogen electrode at 25° C.
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