Invention Grant
US08668849B2 Sputtering target, oxide semiconductor film and semiconductor device
有权
溅射靶，氧化物半导体膜和半导体器件
- Patent Title: Sputtering target, oxide semiconductor film and semiconductor device
- Patent Title (中): 溅射靶，氧化物半导体膜和半导体器件
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Application No.: US13468119Application Date: 2012-05-10
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Publication No.: US08668849B2Publication Date: 2014-03-11
- Inventor: Kazuyoshi Inoue , Koki Yano , Masashi Kasami
- Applicant: Kazuyoshi Inoue , Koki Yano , Masashi Kasami
- Applicant Address: JP Tokyo
- Assignee: Idemitsu Kosan Co., Ltd.
- Current Assignee: Idemitsu Kosan Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Millen, White, Zelano & Branigan, P.C.
- Priority: JP2007-072596 20070320; JP2007-076810 20070323
- Main IPC: H01B1/08
- IPC: H01B1/08 ; H01L51/50
Abstract:
A sputtering target including an oxide sintered body, the oxide sintered body containing indium (In) and at least one element selected from gadolinium (Gd), dysprosium (Dy), holmium (Ho), erbium (Er) and ytterbium (Yb), and the oxide sintered body substantially being of a bixbyite structure.
Public/Granted literature
- US20120273777A1 SPUTTERING TARGET, OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE Public/Granted day:2012-11-01
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