Invention Grant
US08668957B2 Method of forming dielectric films, new precursors and their use in semiconductor manufacturing
有权
形成介电膜，新前体及其在半导体制造中的应用方法
- Patent Title: Method of forming dielectric films, new precursors and their use in semiconductor manufacturing
- Patent Title (中): 形成介电膜，新前体及其在半导体制造中的应用方法
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Application No.: US12303169Application Date: 2007-03-16
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Publication No.: US08668957B2Publication Date: 2014-03-11
- Inventor: Christian Dussarrat , Nicolas Blasco , Audrey Pinchart , Christophe Lachaud
- Applicant: Christian Dussarrat , Nicolas Blasco , Audrey Pinchart , Christophe Lachaud
- Applicant Address: FR Paris
- Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
- Current Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
- Current Assignee Address: FR Paris
- Agent Patricia E. McQueeney
- Priority: WOPCT/EP2006/062893 20060602
- International Application: PCT/EP2007/052507 WO 20070316
- International Announcement: WO2007/141059 WO 20071213
- Main IPC: C23C16/40
- IPC: C23C16/40
Abstract:
Method of deposition on a substrate, of a metal containing dielectric film comprising a compound of the formula (I): (M11-aM2a)ObNc, (I) wherein 0≦a
Public/Granted literature
- US20090203222A1 METHOD OF FORMING DIELECTRIC FILMS, NEW PRECURSORS AND THEIR USE IN SEMICONDUCTOR MANUFACTURING Public/Granted day:2009-08-13
Information query
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