Invention Grant
- Patent Title: Resist pattern-forming method
- Patent Title (中): 抗蚀图案形成方法
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Application No.: US13434851Application Date: 2012-03-30
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Publication No.: US08669042B2Publication Date: 2014-03-11
- Inventor: Yusuke Anno , Takashi Mori , Hirokazu Sakakibara , Taiichi Furukawa , Kazunori Takanashi , Hiromitsu Tanaka , Shin-ya Minegishi
- Applicant: Yusuke Anno , Takashi Mori , Hirokazu Sakakibara , Taiichi Furukawa , Kazunori Takanashi , Hiromitsu Tanaka , Shin-ya Minegishi
- Applicant Address: JP Tokyo
- Assignee: JSR Corporation
- Current Assignee: JSR Corporation
- Current Assignee Address: JP Tokyo
- Agency: Ditthavong Mori & Steiner, P.C.
- Priority: JP2010-202361 20100909; JP2011-181004 20110822
- Main IPC: G03F7/26
- IPC: G03F7/26
Abstract:
A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.
Public/Granted literature
- US20120183908A1 RESIST PATTERN-FORMING METHOD Public/Granted day:2012-07-19
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