Invention Grant
US08669122B2 Method for producing a magnetic tunnel junction and magnetic tunnel junction thus obtained
失效
用于制造由此获得的磁性隧道结和磁性隧道结的方法
- Patent Title: Method for producing a magnetic tunnel junction and magnetic tunnel junction thus obtained
- Patent Title (中): 用于制造由此获得的磁性隧道结和磁性隧道结的方法
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Application No.: US13112050Application Date: 2011-05-20
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Publication No.: US08669122B2Publication Date: 2014-03-11
- Inventor: Bernard Viala , Marie-Claire Cyrille , Bernard Dieny , Kévin Garello , Olivier Redon
- Applicant: Bernard Viala , Marie-Claire Cyrille , Bernard Dieny , Kévin Garello , Olivier Redon
- Applicant Address: FR Paris FR Paris
- Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives,Centre National de la Recherche Scientifique
- Current Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives,Centre National de la Recherche Scientifique
- Current Assignee Address: FR Paris FR Paris
- Agency: Burr & Brown, PLLC
- Priority: FR0858469 20081211
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
According to this method for producing a magnetic tunnel junction, a film of a dielectric material capable of acting as a tunnel barrier is deposited between two nanocrystalline or amorphous magnetic films. The dielectric material constituting the tunnel barrier consists of an at least partially crystalline perovskite, and said material is deposited by ion beam sputtering in a vacuum chamber.
Public/Granted literature
- US20110266642A1 METHOD FOR PRODUCING A MAGNETIC TUNNEL JUNCTION AND MAGNETIC TUNNEL JUNCTION THUS OBTAINED Public/Granted day:2011-11-03
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