Invention Grant
- Patent Title: Method of producing III-nitride light-emitting diode
- Patent Title (中): 生产III族氮化物发光二极管的方法
-
Application No.: US13335199Application Date: 2011-12-22
-
Publication No.: US08669128B2Publication Date: 2014-03-11
- Inventor: Shang-Jr Gwo , Hon-Way Lin , Yu-Jung Lu
- Applicant: Shang-Jr Gwo , Hon-Way Lin , Yu-Jung Lu
- Applicant Address: TW Hsinchu
- Assignee: National Tsing Hua University
- Current Assignee: National Tsing Hua University
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
This invention relates to structures and fabricating methods of light-emitting diodes capable of emitting white or a color within full-visible-spectrum with better efficiency and flexibility. An embodiment provides a light-emitting diode array consisted of one or more light-emitting diodes on a substrate. Each light-emitting diode comprises a first doped nanorod, an active light-emitting region consisted of one or more nanodisks on the first doped nanorod, and a second doped nanorod on the active light-emitting region. Another embodiment provides a fabricating method of the light-emitting diode array.
Public/Granted literature
- US20120097920A1 III-NITRIDE LIGHT-EMITTING DIODE AND METHOD OF PRODUCING THE SAME Public/Granted day:2012-04-26
Information query
IPC分类: