Invention Grant
US08669133B2 Crosstalk improvement through P on N structure for image sensor
有权
通过P on N结构对图像传感器进行串扰改善
- Patent Title: Crosstalk improvement through P on N structure for image sensor
- Patent Title (中): 通过P on N结构对图像传感器进行串扰改善
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Application No.: US12780625Application Date: 2010-05-14
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Publication No.: US08669133B2Publication Date: 2014-03-11
- Inventor: Chung-Wei Chang , Han-Chi Liu , Chun-Yao Ko , Shou-Gwo Wuu
- Applicant: Chung-Wei Chang , Han-Chi Liu , Chun-Yao Ko , Shou-Gwo Wuu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate having a first type of dopant; a semiconductor layer having a second type of dopant different from the first type of dopant and disposed on the semiconductor substrate; and an image sensor formed in the semiconductor layer.
Public/Granted literature
- US20100221865A1 Crosstalk Improvement Through P On N Structure For Image Sensor Public/Granted day:2010-09-02
Information query
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