Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13549001Application Date: 2012-07-13
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Publication No.: US08669138B2Publication Date: 2014-03-11
- Inventor: Akinobu Shibuya , Koichi Takemura , Akira Ouchi , Tomoo Murakami
- Applicant: Akinobu Shibuya , Koichi Takemura , Akira Ouchi , Tomoo Murakami
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2007-052103 20070301
- Main IPC: H01L21/60
- IPC: H01L21/60

Abstract:
A substrate and a semiconductor chip are connected by means of flip-chip interconnection. Around connecting pads of the substrate and input/output terminals of the semiconductor chip, an underfill material is injected. The underfill material is a composite material of filler and resin. Also, a first main surface of the substrate, which is not covered with the underfill material, and the side surfaces of the semiconductor chip are encapsulated with a molding material. The molding material is a composite material of filler and resin. An integrated body of the substrate and the semiconductor chip, which are covered with the molding material, is thinned from above and below.
Public/Granted literature
- US20130005085A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2013-01-03
Information query
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