High-K metal gate electrode structures formed at different process stages of a semiconductor device

Invention Grant

US08669151B2 High-K metal gate electrode structures formed at different process stages of a semiconductor device 有权

Title translation: 在半导体器件的不同工艺阶段形成的高K金属栅电极结构

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Patent Title: High-K metal gate electrode structures formed at different process stages of a semiconductor device
Patent Title (中): 在半导体器件的不同工艺阶段形成的高K金属栅电极结构
Application No.: US12909291

Application Date: 2010-10-21
Publication No.: US08669151B2

Publication Date: 2014-03-11
Inventor: Jan Hoentschel , Sven Beyer , Thilo Scheiper , Uwe Griebenow
Applicant: Jan Hoentschel , Sven Beyer , Thilo Scheiper , Uwe Griebenow
Applicant Address: KY Grand Cayman
Assignee: GLOBALFOUNDRIES Inc.
Current Assignee: GLOBALFOUNDRIES Inc.
Current Assignee Address: KY Grand Cayman
Agency: Amerson Law Firm, PLLC
Priority: DE102009055392 20091230
Main IPC: H01L21/8234
IPC: H01L21/8234

High-K metal gate electrode structures formed at different process stages of a semiconductor device

Abstract:

Sophisticated high-k metal gate electrode structures are provided on the basis of a hybrid process strategy in which the work function of certain gate electrode structures is adjusted in an early manufacturing stage, while, in other gate electrode structures, the initial gate stack is used as a dummy material and is replaced in a very advanced manufacturing stage. In this manner, superior overall process robustness in combination with enhanced device performance may be achieved.

Abstract(Chinese):

基于混合处理策略提供了复杂的高k金属栅电极结构，其中在早期制造阶段调整某些栅电极结构的功函数，而在其他栅电极结构中，使用初始栅叠层作为虚拟材料，并在非常先进的制造阶段被替换。以这种方式，可以实现与增强的设备性能相结合的优异的整体过程稳健性。

Public/Granted literature

US20110156154A1 HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED AT DIFFERENT PROCESS STAGES OF A SEMICONDUCTOR DEVICE Public/Granted day:2011-06-30

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺