Invention Grant
US08669157B2 Non-volatile memory cell having a heating element and a substrate-based control gate
有权
具有加热元件和基于基板的控制栅极的非易失性存储单元
- Patent Title: Non-volatile memory cell having a heating element and a substrate-based control gate
- Patent Title (中): 具有加热元件和基于基板的控制栅极的非易失性存储单元
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Application No.: US13477019Application Date: 2012-05-21
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Publication No.: US08669157B2Publication Date: 2014-03-11
- Inventor: Jeffrey A. Babcock , Yuri Mirgorodski , Natalia Lavrovskaya , Saurabh Desai
- Applicant: Jeffrey A. Babcock , Yuri Mirgorodski , Natalia Lavrovskaya , Saurabh Desai
- Applicant Address: US CA Santa Clara
- Assignee: National Semiconductor Corporation
- Current Assignee: National Semiconductor Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
The number of times that a non-volatile memory (NVM) can be programmed and erased is substantially increased by utilizing a localized heating element that anneals the oxide that is damaged by tunneling charge carriers when the NVM is programmed and erased. The program and erase voltages are also reduced when heat from the heating element is applied prior to programming and erasing.
Public/Granted literature
- US20120230118A1 NON-VOLATILE MEMORY CELL HAVING A HEATING ELEMENT AND A SUBSTRATE-BASED CONTROL GATE Public/Granted day:2012-09-13
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