Invention Grant
US08669164B2 Method of fabricating free-form, high-aspect ratio components for high-current, high-speed microelectronics
有权
制造高电流，高速微电子学自由形式，高纵横比组分的方法
- Patent Title: Method of fabricating free-form, high-aspect ratio components for high-current, high-speed microelectronics
- Patent Title (中): 制造高电流，高速微电子学自由形式，高纵横比组分的方法
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Application No.: US12753682Application Date: 2010-04-02
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Publication No.: US08669164B2Publication Date: 2014-03-11
- Inventor: James L. Maxwell , Chris R. Rose , Marcie R. Black , Robert W. Springer
- Applicant: James L. Maxwell , Chris R. Rose , Marcie R. Black , Robert W. Springer
- Applicant Address: US NM Los Alamos
- Assignee: Los Alamos National Security, LLC
- Current Assignee: Los Alamos National Security, LLC
- Current Assignee Address: US NM Los Alamos
- Agent Ryan B. Kennedy
- Main IPC: H01L21/205
- IPC: H01L21/205 ; H01L21/365 ; C01B33/02 ; C01B35/00
Abstract:
Microelectronic structures and devices, and method of fabricating a three-dimensional microelectronic structure is provided, comprising passing a first precursor material for a selected three-dimensional microelectronic structure into a reaction chamber at temperatures sufficient to maintain said precursor material in a predominantly gaseous state; maintaining said reaction chamber under sufficient pressures to enhance formation of a first portion of said three-dimensional microelectronic structure; applying an electric field between an electrode and said microelectronic structure at a desired point under conditions whereat said first portion of a selected three-dimensional microelectronic structure is formed from said first precursor material; positionally adjusting either said formed three-dimensional microelectronic structure or said electrode whereby further controlled growth of said three-dimensional microelectronic structure occurs; passing a second precursor material for a selected three-dimensional microelectronic structure into a reaction chamber at temperatures sufficient to maintain said precursor material in a predominantly gaseous state; maintaining said reaction chamber under sufficient pressures whereby a second portion of said three-dimensional microelectronic structure formation is enhanced; applying an electric field between an electrode and said microelectronic structure at a desired point under conditions whereat said second portion of a selected three-dimensional microelectronic structure is formed from said second precursor material; and, positionally adjusting either said formed three-dimensional microelectronic structure or said electrode whereby further controlled growth of said three-dimensional microelectronic structure occurs.
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