Invention Grant
- Patent Title: Method for reducing the concentration of oxygen, carbon, and silicon impurities on nitrogen-polar surfaces of gallium nitride
- Patent Title (中): 降低氮化镓氮极表面氧，碳和硅杂质浓度的方法
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Application No.: US13737010Application Date: 2013-01-09
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Publication No.: US08669168B1Publication Date: 2014-03-11
- Inventor: David F. Storm , Douglas S. Katzer , Glenn G. Jernigan , Steven C. Binari
- Applicant: David F. Storm , Douglas S. Katzer , Glenn G. Jernigan , Steven C. Binari
- Applicant Address: US DC Washington
- Assignee: The United States of America, as represented by the Secretary of the Navy
- Current Assignee: The United States of America, as represented by the Secretary of the Navy
- Current Assignee Address: US DC Washington
- Agency: US Naval Research Laboratory
- Agent Roy Roberts
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A method of preparing GaN material includes subjecting a GaN substrate to at least two cycles of Ga deposition and desorption, then applying a layer of AlN to the GaN substrate, then growing GaN on the AlN layer by molecular beam epitaxy. This results in reduced concentrations of oxygen, carbon, and silicon impurities.
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