Invention Grant
- Patent Title: Multi-die stacking using bumps with different sizes
- Patent Title (中): 使用不同尺寸的凸块进行多芯片堆叠
-
Application No.: US13732543Application Date: 2013-01-02
-
Publication No.: US08669174B2Publication Date: 2014-03-11
- Inventor: Weng-Jin Wu , Ying-Ching Shih , Wen-Chih Chiou , Shin-Puu Jeng , Chen-Hua Yu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
A device includes a first die having a first side and a second side opposite to first side, the first side includes a first region and a second region, and a first metal bump of a first horizontal size formed on the first region of the first side of the first die. A second die is bonded to the first metal bump at the first side of the first die. A dielectric layer is formed over the first side of the first die and includes a first portion directly over the second die, a second portion covering the second die. A second metal bump of a second horizontal size greater than the first horizontal size is formed on the second region of the first side of the first die. An electrical component is bonded to the first side of the first die through the second metal bump.
Public/Granted literature
- US20130122700A1 Multi-Die Stacking Using Bumps with Different Sizes Public/Granted day:2013-05-16
Information query
IPC分类: