Invention Grant
US08669184B2 Method for improving flatness of a layer deposited on polycrystalline layer
有权
提高沉积在多晶层上的层的平坦度的方法
- Patent Title: Method for improving flatness of a layer deposited on polycrystalline layer
- Patent Title (中): 提高沉积在多晶层上的层的平坦度的方法
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Application No.: US13012506Application Date: 2011-01-24
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Publication No.: US08669184B2Publication Date: 2014-03-11
- Inventor: Tuung Luoh , Ling-Wu Yang , Ta-Hone Yang , Kuang-Chao Chen
- Applicant: Tuung Luoh , Ling-Wu Yang , Ta-Hone Yang , Kuang-Chao Chen
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX International Co., Ltd.
- Current Assignee: MACRONIX International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
Described is a method for improving the flatness of a layer deposited on a doped polycrystalline layer, which includes reducing the grain size of the polycrystalline layer to decrease the out-diffusion amount of the dopant from the polycrystalline layer, and/or reducing the amount of the out-diffusing dopant on the surface of the polycrystalline layer.
Public/Granted literature
- US20120190198A1 METHOD FOR IMPROVING FLATNESS OF A LAYER DEPOSITED ON POLYCRYSTALLINE LAYER Public/Granted day:2012-07-26
Information query
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