Invention Grant
US08669186B2 Methods of forming SRAM devices using sidewall image transfer techniques
有权
使用侧壁图像传输技术形成SRAM器件的方法
- Patent Title: Methods of forming SRAM devices using sidewall image transfer techniques
- Patent Title (中): 使用侧壁图像传输技术形成SRAM器件的方法
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Application No.: US13359197Application Date: 2012-01-26
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Publication No.: US08669186B2Publication Date: 2014-03-11
- Inventor: Nicholas V. LiCausi
- Applicant: Nicholas V. LiCausi
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L21/311
- IPC: H01L21/311
Abstract:
In one example, the method includes forming a hard mask layer above a semiconducting substrate, forming a patterned spacer mask layer above the hard mask layer, wherein the patterned spacer mask layer is comprised of a plurality of first spacers, second spacers and third spacers, and performing a first etching process on the hard mask layer through the patterned spacer mask layer to define a patterned hard mask layer. The method also includes performing a second etching process through the patterned hard mask layer to define a plurality of first fins, second fins and third fins in the substrate, wherein the first fins have a width that corresponds approximately to a width of the first spacers, the second fins have a width that corresponds approximately to a width of the second spacers, and the third fins have a width that corresponds approximately to a width of the third spacers.
Public/Granted literature
- US20130196508A1 Methods of Forming SRAM Devices Using Sidewall Image Transfer Techniques Public/Granted day:2013-08-01
Information query
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