Invention Grant
- Patent Title: Porous lift-off layer for selective removal of deposited films
- Patent Title (中): 用于选择性去除沉积膜的多孔剥离层
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Application No.: US13318971Application Date: 2010-05-07
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Publication No.: US08669187B2Publication Date: 2014-03-11
- Inventor: Emanuel M. Sachs , Andrew M. Gabor
- Applicant: Emanuel M. Sachs , Andrew M. Gabor
- Applicant Address: US MA Bedford
- Assignee: 1366 Technologies, Inc.
- Current Assignee: 1366 Technologies, Inc.
- Current Assignee Address: US MA Bedford
- Agent Steven J. Weissburg
- International Application: PCT/US2010/034067 WO 20100507
- International Announcement: WO2010/129884 WO 20101111
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461

Abstract:
A porous lift off layer facilitates removal of films from surfaces, such as semiconductors. A layer, with porosities typically larger than the film thickness is provided where no film is desired. The film is applied over the porous layer and also where it is desired. The porous material and the film are then removed from areas where film is not intended. The porous layer can be provided as a slurry, dried to open porosities, or fugitive particles within a field, which disassociate upon the application of heat or solvent. The film can be removed by etchant that enters through porosities that have arisen due to the film not bridging the spaces between solid portions. Etchant attacks both film surfaces. Particles may have diameters of four to ten times the film thickness. Particles may be silica, alumina and ceramics. Porous layers can be used in depressions or on flat surfaces.
Public/Granted literature
- US20120122266A1 POROUS LIFT-OFF LAYER FOR SELECTIVE REMOVAL OF DEPOSITED FILMS Public/Granted day:2012-05-17
Information query
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