Invention Grant
US08669190B2 Method for manufacturing semiconductor device and semiconductor wafer 有权
制造半导体器件和半导体晶片的方法

Method for manufacturing semiconductor device and semiconductor wafer
Abstract:
In a method for manufacturing a semiconductor device, a process of providing a semiconductor wafer having a wiring layer having conductive patterns and a plurality of insulation films containing a first insulation film surrounding side surfaces of the conductive patterns are provided. After the process of providing the semiconductor wafer, a process of removing some regions of the plurality of insulation films to form openings is provided. Herein, the first insulation film is disposed to a position closer to the circumference of the semiconductor wafer than a position closest to the outermost circumference of the wafer among the arrangement positions of the conductive patterns.
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