Invention Grant
- Patent Title: Method for manufacturing semiconductor device and semiconductor wafer
- Patent Title (中): 制造半导体器件和半导体晶片的方法
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Application No.: US13366720Application Date: 2012-02-06
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Publication No.: US08669190B2Publication Date: 2014-03-11
- Inventor: Kenji Togo , Hiroaki Sano
- Applicant: Kenji Togo , Hiroaki Sano
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Canon USA, Inc. IP Division
- Priority: JP2011-026349 20110209; JP2011-223295 20111007
- Main IPC: H01L21/461
- IPC: H01L21/461

Abstract:
In a method for manufacturing a semiconductor device, a process of providing a semiconductor wafer having a wiring layer having conductive patterns and a plurality of insulation films containing a first insulation film surrounding side surfaces of the conductive patterns are provided. After the process of providing the semiconductor wafer, a process of removing some regions of the plurality of insulation films to form openings is provided. Herein, the first insulation film is disposed to a position closer to the circumference of the semiconductor wafer than a position closest to the outermost circumference of the wafer among the arrangement positions of the conductive patterns.
Public/Granted literature
- US20120199978A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR WAFER Public/Granted day:2012-08-09
Information query
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