Imaging device in particular of the CMOS time delay and integration type

Invention Grant

US08669510B2 Imaging device in particular of the CMOS time delay and integration type 有权

Title translation: 成像设备特别是CMOS延时和集成型

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Patent Title: Imaging device in particular of the CMOS time delay and integration type
Patent Title (中): 成像设备特别是CMOS延时和集成型
Application No.: US13240483

Application Date: 2011-09-22
Publication No.: US08669510B2

Publication Date: 2014-03-11
Inventor: François Roy
Applicant: François Roy
Applicant Address: FR Crolles
Assignee: STMicroelectronics (Crolles 2) SAS
Current Assignee: STMicroelectronics (Crolles 2) SAS
Current Assignee Address: FR Crolles
Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
Priority: FR1058646 20101022
Main IPC: H01L31/062
IPC: H01L31/062

Imaging device in particular of the CMOS time delay and integration type

Abstract:

An imaging device may be formed in a semiconductor substrate including a matrix array of photosites extending in a first direction and a second direction. The imaging device may include a transfer module configured to transfer charge in the first direction and an extraction module configured to extract charge in the second direction.

Abstract(Chinese):

成像装置可以形成在包括在第一方向和第二方向上延伸的光电子的矩阵阵列的半导体衬底中。成像装置可以包括被配置为沿第一方向传送电荷的传送模块和被配置为在第二方向上提取电荷的提取模块。

Public/Granted literature

US20120097838A1 IMAGING DEVICE IN PARTICULAR OF THE CMOS TIME DELAY AND INTEGRATION TYPE Public/Granted day:2012-04-26

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L31/00	对红外辐射、光、较短波长的电磁辐射，或微粒辐射敏感的，并且专门适用于把这样的辐射能转换为电能的，或者专门适用于通过这样的辐射进行电能控制的半导体器件；专门适用于制造或处理这些半导体器件或其部件的方法或设备；其零部件（H01L51/42优先；由形成在一共用衬底内或其上的多个固态组件，而不是辐射敏感元件与一个或多个电光源的结合所组成的器件入H01L27/00）
H01L31/04	.用作光伏〔PV〕转换器件（制造中其测试入H01L21/66；制造之后其测试入H02S50/10）
H01L31/06	..以至少有一个电位跃变势垒或表面势垒为特征的
H01L31/062	...只是金属—绝缘体—半导体型势垒的