Invention Grant
- Patent Title: Thin film transistor substrate and method for fabricating the same
- Patent Title (中): 薄膜晶体管基板及其制造方法
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Application No.: US13221058Application Date: 2011-08-30
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Publication No.: US08669557B2Publication Date: 2014-03-11
- Inventor: Hee-Young Kwack , Mun Gi Park
- Applicant: Hee-Young Kwack , Mun Gi Park
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Morgan, Lewis & Bockius LLP
- Priority: KR10-2011-0042176 20110503
- Main IPC: H01L29/10
- IPC: H01L29/10

Abstract:
The present invention relates to a thin film transistor substrate and a method for fabricating the same which can reduce a number of steps. The method for fabricating a thin film transistor substrate includes the steps of a first mask step forming a first conductive pattern on a substrate to include a gate electrode and a gate line, a second mask step depositing a gate insulating film on the substrate having the first conductive pattern formed thereon and forming a second conductive pattern on the gate insulating film to include a semiconductor pattern, source and drain electrodes and data line, a third mask step depositing a first protective film on the substrate having the second conductive pattern formed thereon and forming a pixel contact hole for exposing the drain electrode passed through the first protective film, a fourth mask step forming a third conductive pattern on the first protective films to have a common electrode and a common line and a second protective film to form an undercut with the common electrode and to include a pixel contact hole which exposes the drain electrode on the common electrode, and a fifth mask step forming a fourth conductive pattern to include a pixel electrode spaced from the common electrode by a space provided by the undercut.
Public/Granted literature
- US20120280237A1 Thin Film Transistor Substrate and Method for Fabricating the Same Public/Granted day:2012-11-08
Information query
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