Invention Grant
US08669559B2 Image display apparatus and image display apparatus manufacturing method 有权
图像显示装置和图像显示装置的制造方法

  • Patent Title: Image display apparatus and image display apparatus manufacturing method
  • Patent Title (中): 图像显示装置和图像显示装置的制造方法
  • Application No.: US13583050
    Application Date: 2011-04-07
  • Publication No.: US08669559B2
    Publication Date: 2014-03-11
  • Inventor: Kazuya Nobayashi
  • Applicant: Kazuya Nobayashi
  • Applicant Address: JP Tokyo
  • Assignee: Canon Kabushiki Kaisha
  • Current Assignee: Canon Kabushiki Kaisha
  • Current Assignee Address: JP Tokyo
  • Agency: Fitzpatrick, Cella, Harper & Scinto
  • Priority: JP2010-091594 20100412
  • International Application: PCT/JP2011/059222 WO 20110407
  • International Announcement: WO2011/129381 WO 20111020
  • Main IPC: H01L29/15
  • IPC: H01L29/15
Image display apparatus and image display apparatus manufacturing method
Abstract:
Provided is an image display apparatus in which color breakup of a reflection image formed from reflected ambient light may be reduced to suppress the influence of an ambient environment. The image display apparatus includes multiple pixels. Each of the pixels includes a light-emitting layer and a structure layer having a refractive index distribution in an in-plane direction parallel to a screen of the image display apparatus, for extracting light generated from the light-emitting layer. The structure layer includes multiple structures formed of a first medium and a layer formed of a second medium having a refractive index different from a refractive index of the first medium. The multiple structures are non-periodically arranged in the layer. Reflected ambient light is reflected by the multiple structures formed of the first medium to have an overlap range to reduce color breakup of a reflection image formed from the reflected ambient light.
Information query
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L29/00 专门适用于整流、放大、振荡或切换,并具有至少一个电位跃变势垒或表面势垒的半导体器件;具有至少一个电位跃变势垒或表面势垒,例如PN结耗尽层或载流子集结层的电容器或电阻器;半导体本体或其电极的零部件(H01L31/00至H01L47/00,H01L51/05优先;除半导体或其电极之外的零部件入H01L23/00;由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00)
H01L29/02 .按其半导体本体的特征区分的
H01L29/12 ..按其构成材料的特征区分的
H01L29/15 ... · ·带有周期性或准周期性电势变化的结构,如多量子阱、超晶格(应用于光控制的这种结构入G02F1/017;应用于半导体激光器的入H01S5/34)
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