Invention Grant
- Patent Title: Light emitting diode package and method for fabricating the same
- Patent Title (中): 发光二极管封装及其制造方法
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Application No.: US13251442Application Date: 2011-10-03
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Publication No.: US08669569B2Publication Date: 2014-03-11
- Inventor: Yu-Nung Shen , Tsung-Chi Wang
- Applicant: Yu-Nung Shen , Tsung-Chi Wang
- Agency: Nixon & Vanderhye P.C.
- Priority: TW99133955A 20101005
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A method for fabricating light emitting diode packages includes: providing a light emitting diode wafer which has a plurality of light emitting diode chips, each of the light emitting diode chips including a semiconductor unit that has p-type and n-type electrode regions, and two electrodes; forming a light-transmissive insulating layer on the light emitting diode chips; forming a reflective metal layer on a portion of the light-transmissive insulating layer; forming a layer of insulating material on the light-transmissive insulating layer and the reflective metal layer, and performing exposing and developing treatments to form the layer of insulating material into a plurality of protective insulating structures; forming a conductor-receiving insulating layer on the light-transmissive insulating layer and the protective insulating structures; and performing a cutting process to obtain a plurality of light emitting diode packages each having at least one of the light emitting diode chips.
Public/Granted literature
- US20120018760A1 LIGHT EMITTING DIODE PACKAGE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2012-01-26
Information query
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