Invention Grant
- Patent Title: Light emitting diode
- Patent Title (中): 发光二极管
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Application No.: US13283276Application Date: 2011-10-27
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Publication No.: US08669577B2Publication Date: 2014-03-11
- Inventor: SungKyoon Kim , SungHo Choo , HyunSeoung Ju
- Applicant: SungKyoon Kim , SungHo Choo , HyunSeoung Ju
- Applicant Address: KR Seoul
- Assignee: LG Innotek Co., Ltd.
- Current Assignee: LG Innotek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Lowe Hauptman & Ham LLP
- Priority: KR10-2010-0107149 20101029
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A light emitting diode is disclosed. The disclosed light emitting diode includes a light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer interposed between the first and second semiconductor layers, a first electrode electrically connected to the first semiconductor layer, a second electrode electrically connected to the second semiconductor layer, and a first reflection layer disposed on the second semiconductor layer. The first reflection layer includes at least a first layer having a first index of refraction and a second layer having a second index of refraction different from the first index of refraction. The first reflection layer is further disposed on a side surface of the second electrode and a portion of an upper surface of the second electrode.
Public/Granted literature
- US20120043575A1 LIGHT EMITTING DIODE Public/Granted day:2012-02-23
Information query
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