Invention Grant
- Patent Title: Robust transistors with fluorine treatment
- Patent Title (中): 具有氟处理的坚固晶体管
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Application No.: US13112285Application Date: 2011-05-20
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Publication No.: US08669589B2Publication Date: 2014-03-11
- Inventor: Yifeng Wu , Marcia Moore , Tim Wisleder , Primit Parikh
- Applicant: Yifeng Wu , Marcia Moore , Tim Wisleder , Primit Parikh
- Applicant Address: US CA Goleta
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US CA Goleta
- Agency: Koppel, Patrick, Heybl & Philpott
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A semiconductor device, and particularly a high electron mobility transistor (HEMT), having a plurality of epitaxial layers and experiencing an operating (E) field. A negative ion region in the epitaxial layers to counter the operating (E) field. One method for fabricating a semiconductor device comprises providing a substrate and growing epitaxial layers on the substrate. Negative ions are introduced into the epitaxial layers to form a negative ion region to counter operating electric (E) fields in the semiconductor device. Contacts can be deposited on the epitaxial layers, either before or after formation of the negative ion region.
Public/Granted literature
- US20110220966A1 ROBUST TRANSISTORS WITH FLUORINE TREATMENT Public/Granted day:2011-09-15
Information query
IPC分类:
