Invention Grant
US08669590B2 Methods and apparatus for forming silicon germanium-carbon semiconductor structures
有权
用于形成硅锗 - 碳半导体结构的方法和装置
- Patent Title: Methods and apparatus for forming silicon germanium-carbon semiconductor structures
- Patent Title (中): 用于形成硅锗 - 碳半导体结构的方法和装置
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Application No.: US13218782Application Date: 2011-08-26
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Publication No.: US08669590B2Publication Date: 2014-03-11
- Inventor: Errol Antonio C. Sanchez , Yi-Chiau Huang
- Applicant: Errol Antonio C. Sanchez , Yi-Chiau Huang
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Moser Taboada
- Agent Alan Taboada
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
Methods and apparatus for forming semiconductor structures are disclosed herein. In some embodiments, a semiconductor structure may include a first germanium carbon layer having a first side and an opposing second side; a germanium-containing layer directly contacting the first side of the first germanium carbon layer; and a first silicon layer directly contacting the opposing second side of the first germanium carbon layer. In some embodiments, a method of forming a semiconductor structure may include forming a first germanium carbon layer atop a first silicon layer; and forming a germanium-containing layer atop the first germanium carbon layer.
Public/Granted literature
- US20130026540A1 METHODS AND APPARATUS FOR FORMING SEMICONDUCTOR STRUCTURES Public/Granted day:2013-01-31
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