Invention Grant
- Patent Title: Hydrogen passivation of integrated circuits
- Patent Title (中): 集成电路的氢钝化
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Application No.: US12890137Application Date: 2010-09-24
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Publication No.: US08669644B2Publication Date: 2014-03-11
- Inventor: Gul B. Basim , Scott R. Summerfelt , Ted S. Moise
- Applicant: Gul B. Basim , Scott R. Summerfelt , Ted S. Moise
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Rose Alyssa Keagy; W. James Brady; Frederick J. Telecky, Jr.
- Main IPC: H01L23/522
- IPC: H01L23/522

Abstract:
An integrated circuit with a passivation trapping layer. An integrated circuit with a hydrogen or deuterium releasing layer underlying a passivation trapping layer. Method for forming an integrated circuit having a hydrogen or deuterium releasing layer. Method for forming an integrated circuit having a passivation trapping layer.
Public/Granted literature
- US20110079884A1 Hydrogen Passivation of Integrated Circuits Public/Granted day:2011-04-07
Information query
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