Invention Grant
- Patent Title: Power semiconductor module
- Patent Title (中): 功率半导体模块
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Application No.: US13414086Application Date: 2012-03-07
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Publication No.: US08669648B2Publication Date: 2014-03-11
- Inventor: Yoshihiro Tomita
- Applicant: Yoshihiro Tomita
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2009-243433 20091022
- Main IPC: H01L23/495
- IPC: H01L23/495

Abstract:
A driver IC which is operated by a power supply system insulated from a control IC is mounted in the vicinity of a switching element on a first conductor pattern. A second conductor pattern connected to a source terminal or an emitter terminal of the switching element is electrically connected to a third conductor pattern on which the driver IC is mounted. A ground terminal of the driver IC is electrically connected to the third conductor pattern, and a drive terminal of the driver IC is electrically connected to a gate terminal or a base terminal of the switching element.
Public/Granted literature
- US20120161303A1 POWER SEMICONDUCTOR MODULE Public/Granted day:2012-06-28
Information query
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