Invention Grant
- Patent Title: High power amplifier
- Patent Title (中): 大功率放大器
-
Application No.: US13016599Application Date: 2011-01-28
-
Publication No.: US08669812B2Publication Date: 2014-03-11
- Inventor: Robert Actis , Robert J. Lender, Jr. , Steve M. Rajkowski , Kanin Chu , Blair E. Coburn
- Applicant: Robert Actis , Robert J. Lender, Jr. , Steve M. Rajkowski , Kanin Chu , Blair E. Coburn
- Applicant Address: US DE Wilmington
- Assignee: Schilmass Co., L.L.C.
- Current Assignee: Schilmass Co., L.L.C.
- Current Assignee Address: US DE Wilmington
- Agency: McAndrews, Held & Malloy, Ltd.
- Main IPC: H03F3/60
- IPC: H03F3/60

Abstract:
A high power amplifier architecture is disclosure. One example configuration includes a first plurality of distributed amplification stages operatively coupled in a first string. A conductive trace associated with the first string provides a stepped structure, such that the associated inductance successively decreases from input to output of the first string. A second plurality of distributed amplification stages is operatively coupled in a second string, and a conductive trace associated therewith provides a stepped structure, such that the associated inductance successively decreases from input to output of the second string. In one example case, each of the first and second strings comprises gallium nitride transistor amplification stages formed on silicon carbide. The module may further include a heat spreader material that thermally and electrically couples to the amplification stages. The conductive trace associated with one string can be shared with another string.
Public/Granted literature
- US20120268213A1 HIGH POWER AMPLIFIER Public/Granted day:2012-10-25
Information query