A solid-state image sensor includes first-color pixels and second-color pixels, each of the first-color pixels including a first antireflection film and a first color filter, and each of the second-color pixels including a second antireflection film and a second color filter, wherein the solid-state image sensor satisfies T1(λ12)≦0.95·Tmax1, and T2(λ12)≦0.95·Tmax2 where λ1 represents a wavelength at which a transmittance of the first color filter is maximized, λ2 represents a wavelength at which a transmittance of the second color filter is maximized, and λ12 represents a central wavelength between wavelengths λ1 and λ2, T1(λ) and T2(λ) respectively represent transmittances of the first antireflection film and the second antireflection film when a wavelength is represented by λ, and Tmax1 and Tmax2 represent maximum values of the transmittances T1(λ) and T2(λ), respectively.