Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US13046896Application Date: 2011-03-14
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Publication No.: US08670243B2Publication Date: 2014-03-11
- Inventor: Takeshi Mitsuhashi , Hirofumi Katami
- Applicant: Takeshi Mitsuhashi , Hirofumi Katami
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-059354 20100316
- Main IPC: H05K1/00
- IPC: H05K1/00

Abstract:
According to one embodiment, semiconductor memory device is capable of operating at a first mode and a second mode which is higher in speed than the first mode. The semiconductor memory device comprising: a semiconductor memory; a controller which controls the semiconductor memory; a connector which is provided with terminals for sending and receiving data to and from an external device; and a substrate on which the semiconductor memory, the controller, and the connector are mounted, the substrate comprising a plurality of wiring layers. The controller and the connector are mounted on an identical surface of the substrate. The substrate comprises a wiring which connects a mounting pad for the terminal for data transfer at the second mode of the connector and a mounting pad for a pin for data transfer at the second mode of the controller to each other on the wiring layer on a mounting surface for the connector and the controller.
Public/Granted literature
- US20110228467A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2011-09-22
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