Invention Grant
- Patent Title: Scalable memory system
- Patent Title (中): 可扩展内存系统
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Application No.: US13776757Application Date: 2013-02-26
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Publication No.: US08671252B2Publication Date: 2014-03-11
- Inventor: Jin-ki Kim , Hakjune Oh , Hong Beom Pyeon , Steven Przybylski
- Applicant: MOSAID Technology Incorporated
- Applicant Address: CA Ottawa
- Assignee: Mosaid Technologies Incorporated
- Current Assignee: Mosaid Technologies Incorporated
- Current Assignee Address: CA Ottawa
- Agent Dennis R. Haszko
- Main IPC: G06F12/00
- IPC: G06F12/00

Abstract:
A memory system architecture has serially connected memory devices. The memory system is scalable to include any number of memory devices without any performance degradation or complex redesign. Each memory device has a serial input/output interface for communicating between other memory devices and a memory controller. The memory controller issues commands in at least one bitstream, where the bitstream follows a modular command protocol. The command includes an operation code with optional address information and a device address, so that only the addressed memory device acts upon the command. Separate data output strobe and command input strobe signals are provided in parallel with each output data stream and input command data stream, respectively, for identifying the type of data and the length of the data. The modular command protocol is used for executing concurrent operations in each memory device to further improve performance.
Public/Granted literature
- US20130170298A1 SCALABLE MEMORY SYSTEM Public/Granted day:2013-07-04
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