Invention Grant
- Patent Title: Method of generating RC technology file
- Patent Title (中): 生成RC技术文件的方法
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Application No.: US13858760Application Date: 2013-04-08
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Publication No.: US08671382B2Publication Date: 2014-03-11
- Inventor: Ke-Ying Su , Hsiao-Shu Chao , Yi-Kan Cheng , Yung-Chin Hou
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G06F11/22

Abstract:
A method of generating resistance-capacitance (RC) technology files is disclosed. The method comprises receiving a plurality of metal schemes from an IC foundry and dividing the plurality of metal schemes into one or more modular RC groups. The method further comprises identifying a modular RC structure; calculating capacitance values of the modular RC structure by means of a field solver; calculating an equivalent dielectric constant and an equivalent height of the RC structure based upon a variety of interconnect layers not having interconnects; calculating an equivalent dielectric constant and an equivalent height for each of the plurality of metal schemes; and deriving capacitance values of each of the plurality of metal schemes from the capacitance values of the modular RC structure.
Public/Granted literature
- US20130227514A1 Method of Generating RC Technology File Public/Granted day:2013-08-29
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