Invention Grant
- Patent Title: Method of manufacturing a magneto-resistance effect element
- Patent Title (中): 制造磁阻效应元件的方法
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Application No.: US13419198Application Date: 2012-03-13
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Publication No.: US08671554B2Publication Date: 2014-03-18
- Inventor: Hideaki Fukuzawa , Hiromi Yuasa , Yoshihiko Fuji
- Applicant: Hideaki Fukuzawa , Hiromi Yuasa , Yoshihiko Fuji
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Nixon & Vanderhye, P.C.
- Priority: JP2006-188712 20060707
- Main IPC: G11B5/17
- IPC: G11B5/17 ; H04R31/00

Abstract:
An example method for manufacturing a magneto-resistance effect element having a magnetic layer, a free magnetization layer, and a spacer layer includes forming a first metallic layer and forming, on the first metallic layer, a second metallic layer. A first conversion treatment is performed to convert the second metallic layer into a first insulating layer and to form a first metallic portion penetrating through the first insulating layer. A third metallic layer is formed on the first insulating layer and the first metallic portion. A second conversion treatment is performed to convert the third metallic layer into a second insulating layer and to form a second metallic portion penetrating through the second insulating layer.
Public/Granted literature
- US20120192998A1 METHOD OF MANUFACTURING A MAGNETO-RESISTANCE EFFECT ELEMENT Public/Granted day:2012-08-02
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