Invention Grant
- Patent Title: Film deposition apparatus and substrate processing apparatus
- Patent Title (中): 薄膜沉积装置和基板处理装置
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Application No.: US12550453Application Date: 2009-08-31
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Publication No.: US08673079B2Publication Date: 2014-03-18
- Inventor: Hitoshi Kato , Manabu Honma , Tomoki Haneishi
- Applicant: Hitoshi Kato , Manabu Honma , Tomoki Haneishi
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP2008-227028 20080904
- Main IPC: C23C16/455
- IPC: C23C16/455 ; C23C16/00

Abstract:
A film deposition apparatus includes: a turntable; a first reaction gas supply part and a second reaction gas supply part extending from a circumferential edge toward a rotation center of the turntable; and a first separation gas supply part provided between the first and second reaction gas supply parts. A first space contains the first reaction gas supply part and has a first height. A second space contains the second reaction gas supply part and has a second height. A third space contains a first separation gas supply part and has a height lower than the first and second heights. A motor provided under the rotation center of the turntable rotates the turntable. A rotation shaft of the turntable and a drive shaft of the motor are coupled without generation of slip.
Public/Granted literature
- US20100050943A1 FILM DEPOSITION APPARATUS AND SUBSTRATE PROCESSING APPARATUS Public/Granted day:2010-03-04
Information query
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