Ammonium sulfide passivation of semiconductors

Invention Grant

US08673746B2 Ammonium sulfide passivation of semiconductors 失效

Title translation: 半导体硫化铵钝化

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Patent Title: Ammonium sulfide passivation of semiconductors
Patent Title (中): 半导体硫化铵钝化
Application No.: US13086009

Application Date: 2011-04-13
Publication No.: US08673746B2

Publication Date: 2014-03-18
Inventor: Joel Myron Barnett , Richard James William Hill
Applicant: Joel Myron Barnett , Richard James William Hill
Applicant Address: US NY Albany
Assignee: Sematech, Inc.
Current Assignee: Sematech, Inc.
Current Assignee Address: US NY Albany
Agency: Heslin Rothenberg Farley & Mesiti P.C.
Main IPC: H01L21/306
IPC: H01L21/306

Ammonium sulfide passivation of semiconductors

Abstract:

The present invention includes methods directed to improved processes for producing a monolayer of sulfur on the surface of a semiconductor. As a surface layer, it functions to passivate the surface; if annealed, it provides a doping element.

Abstract(Chinese):

本发明包括用于在半导体表面上制备单层硫的改进方法的方法。作为表面层，其功能是钝化表面; 如果退火，则提供掺杂元素。

Public/Granted literature

US20120264309A1 AMMONIUM SULFIDE PASSIVATION OF SEMICONDUCTORS Public/Granted day:2012-10-18

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）