Invention Grant
- Patent Title: Parameter extraction method
- Patent Title (中): 参数提取方法
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Application No.: US11785415Application Date: 2007-04-17
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Publication No.: US08676547B2Publication Date: 2014-03-18
- Inventor: Mitsuro Seki
- Applicant: Mitsuro Seki
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2006-114945 20060418
- Main IPC: G06F17/10
- IPC: G06F17/10

Abstract:
It is an object to provide a parameter extraction method using a model equation having a physical meaning, in which parameters optimum for an element are extracted without setting appropriate initial values based on experience or deep understanding of models and actual device characteristics.A structure is provided in which multiple patterns of initial values of parameters are generated by a random number generator mechanism, and automatic parameter extraction is executed for each initial value to select a combination of parameters in which ultimate difference between a calculated value and a measured value is minimized thereby finding an optimal solution.
Public/Granted literature
- US20070260433A1 Parameter extraction method Public/Granted day:2007-11-08
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