Invention Grant
- Patent Title: Memory system
- Patent Title (中): 内存系统
-
Application No.: US13782006Application Date: 2013-03-01
-
Publication No.: US08677059B2Publication Date: 2014-03-18
- Inventor: Junji Yano , Hidenori Matsuzaki , Kosuke Hatsuda
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-051474 20080301
- Main IPC: G06F13/10
- IPC: G06F13/10

Abstract:
According to one embodiment, a memory system includes a nonvolatile semiconductor memory include a first area, and a second area smaller than the first area; and a controller configured to control data stored in the nonvolatile semiconductor memory, wherein the nonvolatile semiconductor memory is configured to store a first data accessible by a host command and to a second data inaccessible by the host command, and when receiving the host command, the controller writes the second data of the first area within the second area and initializes a first address information related the first data.
Public/Granted literature
- US20130179630A1 MEMORY SYSTEM Public/Granted day:2013-07-11
Information query