Invention Grant
- Patent Title: Semiconductor storage device
- Patent Title (中): 半导体存储设备
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Application No.: US12413701Application Date: 2009-03-30
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Publication No.: US08677069B2Publication Date: 2014-03-18
- Inventor: Hiroko Okabayashi , Tetsuya Kaise , Noriaki Emura
- Applicant: Hiroko Okabayashi , Tetsuya Kaise , Noriaki Emura
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-092617 20080331
- Main IPC: G06F12/02
- IPC: G06F12/02 ; G06F13/20

Abstract:
Provided is a semiconductor storage device having a first interface section meeting a USB standard for connection to host equipment, a NAND memory section that is a first semiconductor memory section, a second interface section to which small memory cards can be connected, each small memory card having a second semiconductor memory section, and a controller capable of controlling the NAND memory section and the second semiconductor memory sections by one linear address.
Public/Granted literature
- US20090248981A1 SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2009-10-01
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