Invention Grant
US08677290B2 Method of forming and using photolithography mask having a scattering bar structure
有权
具有散射棒结构的光刻掩模的形成和使用方法
- Patent Title: Method of forming and using photolithography mask having a scattering bar structure
- Patent Title (中): 具有散射棒结构的光刻掩模的形成和使用方法
-
Application No.: US13277920Application Date: 2011-10-20
-
Publication No.: US08677290B2Publication Date: 2014-03-18
- Inventor: Yung-Sung Yen , Kuei Shun Chen , Chien-Wen Lai , Cherng-Shyan Tsay
- Applicant: Yung-Sung Yen , Kuei Shun Chen , Chien-Wen Lai , Cherng-Shyan Tsay
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F1/36
- IPC: G03F1/36 ; G03F1/80 ; G06F17/50
Abstract:
A method of forming a photolithography mask including forming a first linear non-dense feature on the mask and forming a plurality of parallel linear assist features disposed substantially perpendicular to the at least one linear non-dense design feature. In an embodiment, the photolithography mask further includes a first transverse linear assist feature disposed substantially transverse to the plurality of parallel linear assist features.
Public/Granted literature
- US20120040276A1 METHOD OF FORMING AND USING PHOTOLITHOGRAPHY MASK HAVING A SCATTERING BAR STRUCTURE Public/Granted day:2012-02-16
Information query
