Invention Grant
- Patent Title: Electromigration compensation system
- Patent Title (中): 移民补偿制度
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Application No.: US12900464Application Date: 2010-10-07
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Publication No.: US08677303B2Publication Date: 2014-03-18
- Inventor: Palkesh Jain , Young-Joon Park
- Applicant: Palkesh Jain , Young-Joon Park
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent John R. Pessetto; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
An integrated circuit is described. The integrated circuit, comprising: a central processor; a memory; and an electromigration compensation system associated with a plurality of leads within the integrated circuit, wherein the electromigration compensation system causes the plurality of leads to have interlocking, horizontally tapered ends that substantially reduces electromigration divergence and consequently lead resistance and circuit shorting.
Public/Granted literature
- US20110080175A1 ELECTROMIGRATION COMPENSATION SYSTEM Public/Granted day:2011-04-07
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