Invention Grant
- Patent Title: Bifacial solar cell using ion implantation
- Patent Title (中): 双极太阳能电池使用离子注入
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Application No.: US14043115Application Date: 2013-10-01
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Publication No.: US08679868B2Publication Date: 2014-03-25
- Inventor: Atul Gupta , Nicholas P. T. Bateman
- Applicant: Atul Gupta , Nicholas P. T. Bateman
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
An improved bifacial solar cell is disclosed. In some embodiments, the front side includes an n-type field surface field, while the back side includes a p-type emitter. In other embodiments, the p-type emitter is on the front side. To maximize the diffusion of majority carriers and lower the series resistance between the contact and the substrate, the regions beneath the metal contacts are more heavily doped. Thus, regions of higher dopant concentration are created in at least one of the FSF or the emitter. These regions are created through the use of selective implants, which can be performed on one or two sides of the bifacial solar cell to improve efficiency.
Public/Granted literature
- US20140030844A1 BIFACIAL SOLAR CELL USING ION IMPLANTATION Public/Granted day:2014-01-30
Information query
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