Invention Grant
- Patent Title: Variable impedance control for memory devices
- Patent Title (中): 存储器件的可变阻抗控制
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Application No.: US13032560Application Date: 2011-02-22
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Publication No.: US08681546B2Publication Date: 2014-03-25
- Inventor: Anthony Fai , Nicholas Seroff
- Applicant: Anthony Fai , Nicholas Seroff
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Meyertons, Hood, Kivlin, Kowert & Goetzel, P.C.
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
This document generally describes systems, devices, methods, and techniques for variably controlling impedance for a memory device where multiple NVM units (e.g., NVM dies) are accessible over a shared bus. Impedance can be varied using switches that are configured to switch between a NVM unit and an impedance terminal. Switches can be adjusted during operation of a memory device so that a memory controller is connected over a shared bus to a selected single NVM unit and one or more impedance terminals. Impedance terminals can be configured to provide a relatively small load (a smaller load than an NVM unit) that is impedance matched (alone or in combination with other impedance terminals and/or a NVM unit) with a source impedance on a shared bus that is provided by a memory controller.
Public/Granted literature
- US20120215958A1 Variable Impedance Control for Memory Devices Public/Granted day:2012-08-23
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