Invention Grant
US08683611B2 High resolution AFM tips containing an aluminum-doped semiconductor nanowire
有权
包含铝掺杂半导体纳米线的高分辨率AFM尖端
- Patent Title: High resolution AFM tips containing an aluminum-doped semiconductor nanowire
- Patent Title (中): 包含铝掺杂半导体纳米线的高分辨率AFM尖端
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Application No.: US13608372Application Date: 2012-09-10
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Publication No.: US08683611B2Publication Date: 2014-03-25
- Inventor: Guy Cohen , Mark C. Reuter , Brent A. Wacaser , Maha M. Khayyat
- Applicant: Guy Cohen , Mark C. Reuter , Brent A. Wacaser , Maha M. Khayyat
- Applicant Address: US NY Armonk SA Riyadh
- Assignee: International Business Machines Corporation,King Abdulaziz City for Science and Technology
- Current Assignee: International Business Machines Corporation,King Abdulaziz City for Science and Technology
- Current Assignee Address: US NY Armonk SA Riyadh
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Louis J. Percello, Esq.
- Main IPC: G01Q60/38
- IPC: G01Q60/38 ; G01Q60/40 ; B82Y15/00
Abstract:
A high resolution AFM tip is provided which includes an AFM probe including a semiconductor cantilever having a semiconductor pyramid extending upward from a surface of the semiconductor cantilever, the semiconductor pyramid having an apex. The AFM tip also includes a single Al-doped semiconductor nanowire on the exposed apex of the semiconductor pyramid, wherein the single Al-doped semiconductor nanowire is epitaxial with respect to the apex of the semiconductor pyramid.
Public/Granted literature
- US20130019351A1 PRODUCTION SCALE FABRICATION METHOD FOR HIGH RESOLUTION AFM TIPS Public/Granted day:2013-01-17
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