Invention Grant
US08684493B2 Droplet-discharging-head manufacturing apparatus, droplet-discharging-head manufacturing method, droplet discharging head, droplet discharging device, and printing apparatus 有权
液滴喷射头制造装置,液滴喷射头制造方法,液滴喷射头,液滴喷射装置和打印装置

  • Patent Title: Droplet-discharging-head manufacturing apparatus, droplet-discharging-head manufacturing method, droplet discharging head, droplet discharging device, and printing apparatus
  • Patent Title (中): 液滴喷射头制造装置,液滴喷射头制造方法,液滴喷射头,液滴喷射装置和打印装置
  • Application No.: US13419800
    Application Date: 2012-03-14
  • Publication No.: US08684493B2
    Publication Date: 2014-04-01
  • Inventor: Yukitoshi TajimaKeiji Ueda
  • Applicant: Yukitoshi TajimaKeiji Ueda
  • Applicant Address: JP Tokyo
  • Assignee: Ricoh Company, Ltd.
  • Current Assignee: Ricoh Company, Ltd.
  • Current Assignee Address: JP Tokyo
  • Agency: Cooper & Dunham LLP
  • Priority: JP2011-057143 20110315
  • Main IPC: B41J2/015
  • IPC: B41J2/015
Droplet-discharging-head manufacturing apparatus, droplet-discharging-head manufacturing method, droplet discharging head, droplet discharging device, and printing apparatus
Abstract:
A droplet-discharging-head manufacturing apparatus that manufactures a droplet discharging head that includes a piezoelectric element formed by a laminated body of ferroelectric layers includes: a film forming unit that forms a ferroelectric precursor film on a silicon wafer having a conductive layer; a heating unit that heats and bakes the ferroelectric precursor layer to form the ferroelectric layer; a cooling unit that cools the ferroelectric layer; a conveying unit that conveys the silicon wafers one by one; and a control unit that controls the film forming unit, the heating unit, the cooling unit, and the conveying unit so as to repeat a series of processes including formation of the ferroelectric precursor layers by the film forming unit, heating of the ferroelectric precursor layers by the heating unit, and cooling of the ferroelectric layers by the cooling unit, for a predetermined number of times for each of the silicon wafers.
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